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Carbon nanotube NRAM computer memory will start to ship in 2019
Nantero and its partner Fujitsu aims to ship a DDR4 DRAM alternative using the technology in 2019.
Nantero's non-volatile NRAMs use electrostatic charge to activate systolic arrays of CNT cells it claims are relatively easy to sputter on to any CMOS process. It claims it will outstrip the DRAM roadmap starting with stacks of 4-Gbit, 100mm2 die made in a 28nm process into initial 8- and 16-Gbit chips.
DRAM is expected to hit a wall around the 64-Gbit device. Micron is exploring alternatives such as phase-change memories.